TCS1221
20V Dual P-Channel Enhancement Mode MOSFET
产品描述
The TCS1221 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
主要特点
Excellent gate charge x RDS(ON)product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating 100% UIS tested典型应用图
订购资讯
| Part Number | Storage Temperature | Package | Devices Per Reel |
|---|---|---|---|
| TCS1221_F | -55°C to +150°C | SOT-23-6L | 3000 |
