TCS12N60
20V N-Channel Enhancement Mode MOSFET
产品描述
The TCS12N60 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
主要特点
- VDS=20V ID=60A
- RDS(ON)< 5.5mΩ @ VGS=4.5V （Type：4.3mΩ）
典型应用图
订购资讯
| Product ID | Pack | Marking | Qty(PCS) |
|---|---|---|---|
| TCS12N60_TC | TO-252-3L | 60N02 XX YYY | 2500 |
