TCS1620
20V N-Channel Enhancement Mode MOSFET
产品描述
The TCS1620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications.
主要特点
- VDS =20V，ID =60A
- RDS(ON)(Typ.)=4.8mΩ @VGS=4.5V
- RDS(ON)(Typ.)= 6.2mΩ @VGS=2.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
典型应用图
订购资讯
| Part Number | Storage Temperature | Package | Devices Per Reel |
|---|---|---|---|
| TCS1620_ TC | -55°C to +150°C | TO-252-2L | 2500 |
