TCS1208N01
20V N-Channel Enhancement Mode MOSFET
产品描述
The TCS1208N01 has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
主要特点
- VDS =20V，ID =0.8A
- RDS(ON)(Typ.)=210mΩ @VGS=4.5V
- RDS(ON)(Typ.)=270mΩ @VGS=2.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
典型应用图
订购资讯
| Part Number | Storage Temperature | Package | Devices Per Reel |
|---|---|---|---|
| TCS1208N01_ C | -55°C to +150°C | SOT23 | 3000 |
