TCS1335
N-Channel Enhancement Mode Power MOSFET
产品描述
The TCs1335 uses advanced trench technology and design to provide excellent Rpsrow, with low gate charge. lt can be used in a wide variety ofapplications.
主要特点
- Vos =30V,In=35A RDs(oN) <10mΩ @ Ves=10V RDs(oN) <14m0 @ Ves=4.5V
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high Eas
- Excellent package for good heat dissipation
- Spedal process technology for high ESD capability
