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TCS1616N01

TCS1616N01

N-Channel Enhancement Mode Power MOSFET

产品描述

The TCS1616N01 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

主要特点

  • VDS=60V, ID=160A
RDS(ON)< 3.5mΩ @ VGS=10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

典型应用图

订购资讯

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