TCS1262
60V N-Channel Enhancement Mode MOSFET
Product Description
The TCS1262has been designedtominimize the on-state resistance (RDS(on)) and yetmaintain superior switching performance, making itideal for high efficiency power managementapplications.
主要特点
- VDS =60V，IDR=340mA
- DS(ON)(Typ.)=1.8Ω @VGS=10V
- RDS(ON)(Typ.)=2.4Ω @VGS
- High power and current handing capability=4.5V
- Lead free product is acquired
- Surface mount package
- ESD Rating: 2000V HBM
典型应用图
订购资讯
| Part Number | Storage Temperature | Package | Devices Per Reel |
|---|---|---|---|
| TCS1262_C | -55°C to +150°C | SOT-363-B | 3000 |
Product
Application
Contact
- Add: Gonghe Industrial Road, Xixiang Street, Baoan District, Shenzhen City
- Mobile：+86-18300048270
- E-mail：sales@tctek.cn
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