TCS1223
Dual Enhancement Mode Power MOSFET (N- and P- Channel)
Product Description
The TCS1223 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
主要特点
- P-Channel
- N-Channel
典型应用图
订购资讯
参数格式不正确或数据为空。Product
Application
Contact
- Add: Gonghe Industrial Road, Xixiang Street, Baoan District, Shenzhen City
- Mobile：+86-18300048270
- E-mail：sales@tctek.cn
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