TCS1116
100V P-Channnel Enhancement Mode MOSFET
Product Description
The TCS1116 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
主要特点
- VDS =-100VIDR=-16A
- DS(ON)(Typ.)=150mΩ @VGSR=-10V
- DS(ON)(Typ.)=200mΩ @VGS=-4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
典型应用图
订购资讯
| Part Number | Storage Temperature | Package | Devices Per Reel |
|---|---|---|---|
| TCS1116_TC | -55°C to +150°C | TO-252-2L | 2500 |
Product
Application
Contact
- Add: Gonghe Industrial Road, Xixiang Street, Baoan District, Shenzhen City
- Mobile：+86-18300048270
- E-mail：sales@tctek.cn
Social Network
