TCS1135
P-Channel Enhancement Mode Power MOSFET
Product Description
The TCS1135 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.
主要特点
- VDS = -30V,ID = -35A
- High Power and current handing capability
- Lead free product is acquired
- Surface mount package
典型应用图
订购资讯
参数格式不正确或数据为空。Product
Application
Contact
- Add: Gonghe Industrial Road, Xixiang Street, Baoan District, Shenzhen City
- Mobile：+86-18300048270
- E-mail：sales@tctek.cn
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