TCS1360
N-Channel Enhancement Mode Power MOSFET
Product Description
The TCS1360N01 uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications
主要特点
- VDS= 30V, ID= 60A
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
典型应用图
订购资讯
参数格式不正确或数据为空。Product
Application
Contact
- Add: Gonghe Industrial Road, Xixiang Street, Baoan District, Shenzhen City
- Mobile：+86-18300048270
- E-mail：sales@tctek.cn
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