TCS1002B
60V N-Channel Enhancement Mode MOSFFET
产品描述
The TCS1002B has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
主要特点
- VDS =60V ID =300mA
- RDS(ON)(Typ.)=2Ω @VGS=10V
- RDS(ON)(Typ.)=2.5Ω @VGS=4.5V
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Lead, Halogen and Antimony Free, RoHS Compliant "Green"
- ESD Protected Up To 2kV
典型应用图
订购资讯
| Part Number | Storage Temperature | Package | Devices Per Reel |
|---|---|---|---|
| TCS1002B-C | -55°C to +150°C | SOT-23 | 3000 |
