TCS10N10
N-Channel 100V,100A,4.75mΩPower MOSFET
产品描述
These N-Channel enhancement mode power field effect transistors are using shielded gate trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
主要特点
- 100V,100A,RDS(on).max=4.75mΩ@VGS= 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green device available
典型应用图
订购资讯
| Device | Device Package | Units/Reel |
|---|---|---|
| TCS10N10_DEFH | DFN 5×6 | 5000 |
