TCS1135
P-Channel Enhancement Mode Power MOSFET
产品描述
The TCS1135 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.
主要特点
- VDS = -30V,ID = -35A
- High Power and current handing capability
- Lead free product is acquired
- Surface mount package
典型应用图
