TCS1214
100V N-Channel Enhancement Mode MOSFET
产品描述
The TCS1214 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.
主要特点
- VDS =100V，ID=4A
- RDS(ON)(Typ.)=130mΩ @VGSR=10
- RDS(ON)(Typ.)=140mΩ @VGS=4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
典型应用图
订购资讯
| Part Number | Storage Temperature | Package | Devices Per Reel |
|---|---|---|---|
| TCS1214_C | -55°C to +150°C | SOT-23-3L | 3000 |
