TCS1223
Dual Enhancement Mode Power MOSFET (N- and P- Channel)
产品描述
The TCS1223 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
主要特点
- P-Channel
- N-Channel
典型应用图
