TCS1313
P-Channel Enhancement Mode Power MOSFET
产品描述
The TCS1313 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology..
This high density process is especially tailored to minimize on-state resistance.
This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications
主要特点
- -30V/-13A, RDS(ON)< 12mΩ (typ.)@VGS=-10V
- -30V/-7.0A, RDS(ON)< 14.5mΩ (typ.)@VGS=-4.5V
- Super high design for extremely low RDS(ON)
- Exceptional on-resistance and Maximum DC current capability
- Full RoHS compliance
- SOP8 package design
典型应用图
订购资讯
| Part Number | Package Code | Package | Shipping |
|---|---|---|---|
| TCS1313_ SH | S | SOP8 | 3000EA / T&R |
