TCS1360
N-Channel Enhancement Mode Power MOSFET
产品描述
The TCS1360N01 uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications
主要特点
- VDS= 30V, ID= 60A
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
典型应用图
