TCS1630
60V N-Channel Enhancement Mode MOSFET
产品描述
The TCS1630 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
主要特点
- 60V/3.0 A, Rosow =70mΩ (typ.)@VGS=10V
- 60V3.0 A,Rosom=78 mΩ (typ.)@VGS=4.5V
- Super high design for extremely low Rps(on)
- Exceptionalon-resistance and Maximum DC current capability
- This is a Full RoHS compliance
- SOT23-3L package design
典型应用图
订购资讯
Part Number | Package Code | Package | Shipping |
---|---|---|---|
TCS1630C | S | SOT23-3L | 3000EA / T&R |