TCS1800 V1.0
30V DUAL N-Channel Enhancement Mode MOSFET
产品描述
The TCS1800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
主要特点
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
典型应用图
订购资讯
| Order Part Number | Storage Temperature | Package | Devices Per Reel |
|---|---|---|---|
| TCS1800-F | -55°C to +150°C | SOT-23-6L | 3000 |
