TCS80N06
60V N-Channel Enhancement Mode MOSFET
产品描述
The TCS80N06 uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
主要特点
- VDS =60V，ID =80A
- RDS(ON)(Typ.)=6mΩ @VGS=10V
- RDS(ON)(Typ.)=9.8mΩ @VGS=6V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 150 °C operating temperature
- 100% UIS tested
典型应用图
订购资讯
| Part Number | Storage Temperature | Package | Devices Per Reel |
|---|---|---|---|
| TCS80N06_ TC | -55°C to +150°C | TO-252-2L | 2500 |
